Dislocation‐free GaAs epitaxial growth with the use of modulation‐doped AlAs‐GaAs superlattice buffer layers
- 15 February 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (7), 543-545
- https://doi.org/10.1063/1.99411
Abstract
Suppression of dislocation threading from the substrate into GaAs epitaxial layers is investigated by using AlAs‐GaAs superlattice buffer layers grown by molecular beam epitaxial technique. The efficiency of suppression is compared among several types of AlAs‐GaAs superlattices with different electrically active impurity‐doping distributions. With the use of modulation‐doped AlAs(Si)‐GaAs superlattice, dislocation threading is almost perfectly suppressed, and consequently, a dislocation‐free epilayer can be grown. Dislocation bending at the AlAs/GaAs interface is thought to be due to the interaction between dislocations and electric charges.Keywords
This publication has 9 references indexed in Scilit:
- Generation and propagation of defects into molecular beam epitaxially grown GaAs from an underlying GaAs substrateJournal of Applied Physics, 1985
- Defect reduction in GaAs epitaxial layers using a GaAsP-InGaAs strained-layer superlatticeApplied Physics Letters, 1985
- Charge collection scanning electron microscopyJournal of Applied Physics, 1982
- The effect of silicon doping on the lattice parameter of gallium arsenide grown by liquid-phase epitaxy, vapour-phase epitaxy and gradient-freeze techniquesJournal of Crystal Growth, 1980
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978
- Use of misfit strain to remove dislocations from epitaxial thin filmsThin Solid Films, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Thermal Expansion of AlAsJournal of Applied Physics, 1970
- Hardening by spinodal decompositionActa Metallurgica, 1963