Defect reduction in GaAs epitaxial layers using a GaAsP-InGaAs strained-layer superlattice
- 1 February 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (3), 294-296
- https://doi.org/10.1063/1.95663
Abstract
GaAsP-InGaAs strained-layer superlattices grown lattice matched to GaAs have been used to reduce the density of threading dislocations originating from the GaAs substrate. GaAs epitaxial layers grown on the GaAsP-InGaAs superlattice buffer layers showed a dislocation density lower by at least an order of magnitude than that obtained from epitaxial layers grown directly on GaAs substrates. Transmission electron microscopy showed that dislocations originating from the GaAs substrate do not penetrate the GaAsP-InGaAs superlattice layers.Keywords
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