Electrical Conductivity of Single Crystals of MgO

Abstract

The electrical conductivity of magnesium oxide at temperatures in the region of 1300°C is observed to depend upon the partial pressure of oxygen surrounding the sample. The conductivity increases at oxygen pressures both higher and lower than 10^—5 atmospheres. At this pressure the conductivity is a minimum. This effect is increased as the iron content is increased and is almost absent in the purest samples. The conductivity is electronic rather than ionic and the number of charge carriers is controlled by the number of lattice vacancies. The dependence of conductivity on oxygen pressure may be satisfactorily explained by changes in stoichiometry and thus lattice defects in magnesium oxide. These changes in stoichiometry are larger when the magnesium oxide is contaminated with a variable valence impurity like iron than when it is pure. If an explanation based on iron changing valance state is accepted, then it may be demonstrated by an analysis of the chemical equilibria involved that anion deficiencies must appear at low oxygen pressures, cation deficiences at high oxygen pressures, and that all defects must lie close to the variable valence impurity ions.