Low-Temperature Surface Cleaning of GaAs by Electron Cyclotron Resonance (ECR) Plasma

Abstract

Low-temperature surface cleaning of GaAs by electron cyclotron resonance (ECR) plasma is carried out. Pure hydrogen is used for the cleaning gas, and ECR plasma is transported to the substrate surface by a divergent magnetic field. In situ reflection high-energy electron diffraction (RHEED) observation reveals that surface cleaning of GaAs can be successfully performed at temperatures as low as 300°C. The interface between the substrate and GaAs grown layer prepared after plasma cleaning is found by SIMS measurement to be cleaner than that prepared by thermal treatment and MBE growth.