Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
- 1 February 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (2A), L142
- https://doi.org/10.1143/jjap.26.l142
Abstract
Hydrogen radical beam cleaning of substrates for GaAs MBE growth has been studied. The cleaning effects of carbon and oxygen contaminated by exposure to air and a lower-grade vacuum were investigated using Auger electron spectroscopy (AES), capacitance-voltage (C-V) carrier profiling, and secondary ion mass spectrometry (SIMS). AES signals of contaminants decreased to the detection limit with hydrogen radical irradiation. Carrier depletion around the growth interface was also reduced with decreasing carbon density.Keywords
This publication has 4 references indexed in Scilit:
- Damage and contamination-free GaAs and AlGaAs etching using a novel ultrahigh-vacuum reactive ion beam etching system with etched surface monitoring and cleaning methodJournal of Vacuum Science & Technology A, 1986
- Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium ArsenideJapanese Journal of Applied Physics, 1985
- GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion ImplanterJapanese Journal of Applied Physics, 1984
- Carrier compensation at interfaces formed by molecular beam epitaxyJournal of Applied Physics, 1982