Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering
- 21 July 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (3), 133-134
- https://doi.org/10.1063/1.97201
Abstract
The process of silicon impurity induced disordering has been used to fabricate very efficient buried heterostructure AlGaAs lasers with lifetimes in the thousands of hours at 50 °C. These devices operate in a single transverse mode up to 25 mW, and in a single longitudinal mode with adjacent mode suppression of 23 dB.Keywords
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