Epitaxial Growth of Ge Layers on Si Substrates by Vacuum Evaporation
- 1 August 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (8), 821
- https://doi.org/10.1143/jjap.7.821
Abstract
The initial growth of vacuum-deposited Ge films on Si (111) has been studied. It has been shown that single crystal Ge layers can be obtained on cleaned Si substrates in high vacuum, but that misfit dislocations exist at the interface of Ge and Si. Electrical properties of p Ge- n Si heterojunctions made by vacuum evaporation have been studied. The I-V characteristics of the diodes can be explained through the existence of misfit dislocation.Keywords
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