Electrical Transport in nGe-pGaAs Heterojunctions†
- 1 June 1966
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 20 (6), 583-599
- https://doi.org/10.1080/00207216608937891
Abstract
A multi-step recombination-tunnelling model, similar to that used to describe the excess current in tunnel diodes, is developed to explain the observed electrical characteristics of nGe-pGaAs heterodiodes. Two different, but quite similar models are used to qualitatively describe the observed forward and reverse characteristics. Quantitative agreement with the experimental characteristics of the many devices presented is obtained by an empirical modification of the resulting equations. The lack of minority carrier injection in these devices is in agreement with the proposed model.Keywords
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