Sub-100°C a-Si:H thin-film transistors on plastic substrates with silicon nitride gate dielectrics
- 1 September 2004
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 22 (5), 2052-2055
- https://doi.org/10.1116/1.1784826
Abstract
No abstract availableKeywords
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