Step-controlled epitaxial growth of SiC: High quality homoepitaxy
- 1 August 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: R: Reports
- Vol. 20 (3), 125-166
- https://doi.org/10.1016/s0927-796x(97)00005-3
Abstract
No abstract availableKeywords
This publication has 102 references indexed in Scilit:
- The role of excess silicon and in situ etching on 4H SiC and 6H SiC epitaxial layer morphologyJournal of Crystal Growth, 1996
- Step bunching in chemical vapor deposition of 6H– and 4H–SiC on vicinal SiC(0001) facesApplied Physics Letters, 1995
- First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactorJournal of Crystal Growth, 1995
- 2000 V 6H-SiC p-n junction diodes grown by chemical vapor depositionApplied Physics Letters, 1994
- Large diameter 6H-SiC for microwave device applicationsJournal of Crystal Growth, 1994
- High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistancesIEEE Electron Device Letters, 1993
- Silicon carbide UV photodiodesIEEE Transactions on Electron Devices, 1993
- Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substratesJournal of Applied Physics, 1988
- Computer modeling of Si and SiC surfaces and surface processes relevant to crystal growth from the vaporJournal of Crystal Growth, 1984
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951