First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactor
- 1 January 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 146 (1-4), 37-41
- https://doi.org/10.1016/0022-0248(94)00466-8
Abstract
No abstract availableKeywords
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