Anisotropic bending during epitaxial growth of mixed crystals on GaAs substrate

Abstract

Crystals of Ga_xIn_1−xAs and GaAs_xP_1−x were deposited on GaAs substrate from the vapor phase, and the deformation properties of these systems accompanying the heteroepitaxial growth were investigated. When the crystal surface of the substrate was {100}, it was found that there was an evident anisotropy of bending in the directions of $\text{〈110〉}$ and $\text{〈110〉}$ , and this phenomenon cannot be explained by the simple bimetal model. The influence of the crystalline surface of the substrate on the deformation was also checked.