Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
- 1 July 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (7A), L551
- https://doi.org/10.1143/jjap.24.l551
Abstract
A suitable GaAs1-z P z substrate composition (z) for InGaAsP double heterojunction laser diodes is discussed. In1-x Ga x As1-y P y (x=0.83, y=0.64)/In1-x'Ga x'As1-y'P y' (x'=0.67, y' ≧0.98) laser diodes fabricated on GaAs1-z P z (z=0.3) substrate by a two-phase-solution technique operated under pulsed conditions at room temperature. The peak wavelength and the threshold current density (J th) were 658.6 nm and 12 kA/cm-2, respectively. This J th is lower than in the previously reported planer type laser diodes fabricated from the same material system.Keywords
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