Ion Mixing of Ni and Pt Layers on Si
- 16 July 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 72 (1), 399-404
- https://doi.org/10.1002/pssa.2210720141
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Ion beam mixing in amorphous silicon II. Theoretical interpretationNuclear Instruments and Methods, 1981
- Ion beam mixing in amorphous silicon I. Experimental investigationNuclear Instruments and Methods, 1981
- Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structuresNuclear Instruments and Methods, 1981
- Theoretical aspects of atomic mixing by ion beamsNuclear Instruments and Methods, 1981
- Ion-beam-induced migration and its effect on concentration profilesNuclear Instruments and Methods, 1980
- The depth resolution of sputter profilingApplied Physics A, 1979
- Ion-induced silicide formation in niobium thin filmsRadiation Effects, 1979
- Analyzing the Formation of a thin Compound Film by Taking Moments on Backscattering SpectraPublished by Springer Nature ,1976
- Radiation effects on solid state diffusionThin Solid Films, 1975
- Alloying of thin palladium films with single crystal and amorphous siliconPhysica Status Solidi (a), 1973