Ion-induced silicide formation in niobium thin films
- 1 January 1979
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 42 (3-4), 217-225
- https://doi.org/10.1080/00337577908209140
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Ion-beam-induced atomic mixingJournal of Applied Physics, 1977
- Recoil implantation from a thin source: I. Underlying theory and numerical resultsSurface Science, 1976
- Radiation effects on solid state diffusionThin Solid Films, 1975
- Migration of Mo atoms across Mo–Si interface induced by Ar+ ion bombardmentApplied Physics Letters, 1974
- Alloying of thin palladium films with single crystal and amorphous siliconPhysica Status Solidi (a), 1973
- RADIATION-ENHANCED DIFFUSION OF BORON IN SILICONApplied Physics Letters, 1969
- Focused collision sequences in tungsten and molybdenumPhilosophical Magazine, 1963
- Radiation Enhancement of Bulk Diffusion in 10% Zn—90% Cu by 30-kev Ne+ Ion BombardmentJournal of Applied Physics, 1961
- Sputtering experiments in the high energy regionNuclear Instruments and Methods, 1961
- Radiation Enhanced Diffusion in SolidsJournal of Applied Physics, 1958