RHEED Intensity Oscillations During MBE Growth of III-V Compounds - An Overview
- 1 January 1988
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling ApproachPhysical Review Letters, 1987
- Effects of diffraction conditions and processes on rheed intensity oscillations during the MBE growth of GaAsApplied Physics A, 1987
- Leed studies of Si molecular beam epitaxy onto Si(111)Journal of Crystal Growth, 1987
- Video system for quantitative measurements of RHEED patternsReview of Scientific Instruments, 1986
- Dynamic effects in RHEED from MBE grown GaAs(001) surfacesSurface Science, 1986
- RHEED studies of heterojunction and quantum well formation during MBE growth — from multiple scattering to band offsetsSurface Science, 1986
- He scattering study of the nucleation and growth of Cu(100) from its vaporPhysical Review B, 1985
- Damped oscillations in reflection high energy electron diffraction during GaAs MBEJournal of Vacuum Science & Technology B, 1983
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Thickness periodicity in the Auger line shape from epitaxial (111)Cu filmsSurface Science, 1981