RHEED studies of heterojunction and quantum well formation during MBE growth — from multiple scattering to band offsets
- 3 March 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 168 (1-3), 423-438
- https://doi.org/10.1016/0039-6028(86)90873-3
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- Positions of the sub-band minima in GaAs(AlGa)As quantum well heterostructuresSuperlattices and Microstructures, 1985
- Well defined superlattice structures made by phase-locked epitary using RHEED intensity oscillationsSuperlattices and Microstructures, 1985
- Phase-Locked Epitaxy Using RHEED Intensity OscillationJapanese Journal of Applied Physics, 1984
- RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)Journal of Vacuum Science & Technology B, 1984
- Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfacesPhysical Review B, 1984
- Damped oscillations in reflection high energy electron diffraction during GaAs MBEJournal of Vacuum Science & Technology B, 1983
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculationsPhysical Review B, 1982
- Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxyJournal of Crystal Growth, 1978
- Bonding direction and surface-structure orientation on GaAs (001)Journal of Applied Physics, 1976