Effects of hot-carrier trapping in n- and p-channel MOSFET's
- 1 August 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (8), 871-876
- https://doi.org/10.1109/t-ed.1983.21229
Abstract
Detailed measurements of hot-carrier gate current and its trapping effects were studied on both n- and p-channel MOSFET's down to submicrometer channel lengths. Comparison of the measurements for these two types of devices is made. No hot-hole gate current or hot-hole trapping was detected in p-channel MOSFET's. A hot-electron gate current is present not only in n-channel MOSFET's, but also in p-channel MOSFET's where the current is increased by hot-electron trapping. By trapping hot electrons uniformly over the channel in n-MOSFET's, it was shown that hot-electron trapping produces only negative oxide charge without generating interface traps.Keywords
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