Electroluminescent shockley diodes of GaAs and GaAsl−x, Px
- 1 November 1973
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 2 (4), 571-599
- https://doi.org/10.1007/bf02655876
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Efficient 1.06-µm emission from InxGa1-xAs electroluminescent diodesIEEE Transactions on Electron Devices, 1972
- Gallium phosphide high-temperature electroluminescent p-n-p-n switches and controlled rectifiersJournal of Applied Physics, 1972
- GaAs vapor-grown Shockley diodes and semiconductor-controlled rectifiersIEEE Transactions on Electron Devices, 1972
- ZnSe Electroluminescent Device Exhibiting Switching and MemoryApplied Physics Letters, 1972
- GaAs vapor-grown bipolar transistorsSolid-State Electronics, 1972
- OBSERVATION OF CURRENT FILAMENTS IN SEMI-INSULATING GaAsApplied Physics Letters, 1968
- Silver-Manganese Evaporated Ohmic Contacts to p-type Gallium ArsenideJournal of the Electrochemical Society, 1968
- A GaAs1−xPx NEGATIVE-RESISTANCE LIGHT-EMITTING DIODEApplied Physics Letters, 1967
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949