ZnSe Electroluminescent Device Exhibiting Switching and Memory
- 15 March 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (6), 207-208
- https://doi.org/10.1063/1.1654112
Abstract
An MIS structure, in which the semiconductor is suitably doped ZnSe, exhibits switching and memory properties. The same structure also emits light in both forward and reverse bias with an emission wavelength characteristic of the impurities present. Although the operation of the device is not completely understood the switching can be attributed to a transfer of charge from deep impurities in the semiconductor to the insulating layer.Keywords
This publication has 3 references indexed in Scilit:
- SWITCHING AND MEMORY IN ZnSe–Ge HETEROJUNCTIONSApplied Physics Letters, 1970
- The Growth and Electrical Characteristics of Epitaxial Layers of Zinc Selenide on p‐Type GermaniumPhysica Status Solidi (b), 1968
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963