Nuclear Reactions in Semiconductors
Open Access
- 1 January 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 27 (6), 1494-1499
- https://doi.org/10.1109/TNS.1980.4331058
Abstract
Soft upsets in semiconductor memory devices can be produced by charged particles produced in nuclear reactions in the semiconductor or in its surrounding materials. We have calculated the particle production cross sections for incident neutrons and protons in various semiconductor materials in the energy range of 5 to 75 MeV. The common semiconductor elements and compounds all have approximately the same alpha particle production. There is also appreciable proton and heavy ion production which under some conditions may cause upsets.Keywords
This publication has 6 references indexed in Scilit:
- Cosmic-Ray-Induced Errors in MOS DevicesIEEE Transactions on Nuclear Science, 1980
- Effect of Cosmic Rays on Computer MemoriesScience, 1979
- Soft Errors Induced by Energetic ProtonsIEEE Transactions on Nuclear Science, 1979
- Correction [to “He and Ne cross sections in natural Mg, Al, and Si targets and radionuclide cross sections in natural Si, Ca, Ti, and Fe targets bombarded with 14- to 45-MeV protons”]Journal of Geophysical Research, 1974
- He and Ne cross sections in natural Mg, Al, and Si targets and radionuclide cross sections in natural Si, Ca, Ti, and Fe targets bombarded with 14- to 45-Mev protonsJournal of Geophysical Research, 1973
- Range and stopping-power tables for heavy ionsAtomic Data and Nuclear Data Tables, 1970