Silicon overgrowth on CoSi2/Si(111) epitaxial structures: Application to permeable base transistor
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4), 463-469
- https://doi.org/10.1016/0022-0248(87)90434-9
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Si/CoSi2/Si permeable base transistor obtained by silicon molecular beam epitaxy over a CoSi2 gratingElectronics Letters, 1986
- Electrical characterisation of epitaxially overgrown Si in Si/CoSi2/Si metal base transistorElectronics Letters, 1986
- Formation of Uniform Solid-Phase Epitaxial CoSi2 Films by Patterning MethodJapanese Journal of Applied Physics, 1985
- Transistor action in Si/CoSi2/Si heterostructuresApplied Physics Letters, 1985
- Formation of thin films of CoSi2: Nucleation and diffusion mechanismsThin Solid Films, 1985
- Kinetics of formation and properties of epitaxial CoSi2 films on Si (111)Journal of Vacuum Science & Technology B, 1985
- Transient capacitance study of epitaxial CoSi2/Si〈111〉 Schottky barriersJournal of Vacuum Science & Technology B, 1985
- Nucleation of a two-dimensional compound during epitaxial growth ofon Si(111)Physical Review B, 1984
- Transistor effect in monolithic Si/CoSi2/Si epitaxial structuresElectronics Letters, 1984