Electron Spin-Flip Raman Scattering in PbTe

Abstract
We have observed electron spin-flip Raman scattering in nPbTe using a 10.6-μ laser and magnetic fields up to 105 kOe. From g-value measurements in samples with 111, 110, and 100 along B, we obtain gII=57.5±2 and g=15±1. The gII is considerably larger than that deduced previously from injection-diode fluorescence and Shubnikov—de Haas measurements. The g measurement gives the first direct observation of anisotropy of g values in PbTe. The magnetic field dependence of intensity of spin-flip scattering for different g-value transitions indicates shifting of electrons from high g-value valleys to low g-value valleys.