The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition
- 15 May 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (10), 5367-5371
- https://doi.org/10.1063/1.355740
Abstract
No abstract availableKeywords
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