Ion backscattering and channeling study of InAs-GaSb superlattices

Abstract

We show that the Rutherford backscattering yield from [100] InAs‐GaSb superlattices has a marked oscillatory structure indicative of the superlattice periodicity. Channeling measurements reveal higher dechanneling along 〈110〉 than along [100] directions, and this can be interpreted as an evidence for relaxation effects along the [100] growth direction at each InAs‐GaSb interface. We attribute this to the fact that, although there is a good lattice match between InAs and GaSb, the interfaces consist of either Ga–As or In–Sb bonds, which differ by 7% in binding distance from InAs‐GaSb.