Dangling bond electronic state on an InP(¯111) surface
- 1 April 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 183 (1-2), 123-133
- https://doi.org/10.1016/s0039-6028(87)80339-4
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Aluminum growth on (100) indium phosphideJournal of Vacuum Science & Technology B, 1985
- Semiconductor surface structuresSurface Science Reports, 1983
- A Cluster Model Method and its Applications to Chemisorptions on Semiconductor SurfacesCommunications in Theoretical Physics, 1983
- Atomic geometries of compound semiconductor surfaces and interfacesJournal of Vacuum Science & Technology A, 1983
- Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface PotentialsPhysical Review Letters, 1980
- Surface state band on GaAs (110) faceApplied Physics Letters, 1974