Surface state band on GaAs (110) face
- 1 November 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (9), 511-514
- https://doi.org/10.1063/1.1655570
Abstract
Careful photoemission studies of surface states on the cleavage GaAs (110) detect no filled states in the band gap. However, empty states pin the surface Fermi level on n ‐type GaAs at midband gap. Filled states are placed below the valence‐band maximum and empty surface states in the upper half of the band gap. Calculations, using the bond orbital model, agree with these results and associate the empty and filled bands with Ga and As, respectively.Keywords
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