Conduction mechanisms in W and WSix ohmic contacts to InGaN and InN
- 30 April 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (4), 531-534
- https://doi.org/10.1016/s0038-1101(96)00188-8
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Thermal stability of W ohmic contacts to n-type GaNJournal of Applied Physics, 1996
- Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistorsApplied Physics Letters, 1995
- Microwave performance of GaN MESFETsElectronics Letters, 1994
- Nonalloyed ohmic contacts on GaN using InN/GaN short-period superlatticesApplied Physics Letters, 1994
- Thermal stability of Ti/Pt/Au nonalloyed ohmic contacts on InNApplied Physics Letters, 1994
- Low resistance ohmic contacts on wide band-gap GaNApplied Physics Letters, 1994
- Metal contacts to gallium nitrideApplied Physics Letters, 1993
- High-power InGaN/GaN double-heterostructure violet light emitting diodesApplied Physics Letters, 1993
- Metal semiconductor field effect transistor based on single crystal GaNApplied Physics Letters, 1993
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991