Novel real-space hot-electron transfer devices
- 1 September 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (9), 334-336
- https://doi.org/10.1109/edl.1983.25753
Abstract
A new class of devices based on hot-electron transfer between two conducting layers is proposed. The essential feature of these devices is a pronounced negative differential resistance (NDR) in the drain circuit, controlled by gate and substrate voltages. This allows a novel type of bistable logic element, which, although being unipolar, is comparable to the CMOS inverter in that a significant current is drawn only during switching. Another possible application is a gate-controlled microwave generator and amplifier. In the present work, the above device concepts are analyzed in the instance of GaAs/ GaAlAs heterojunction realizations.Keywords
This publication has 9 references indexed in Scilit:
- Fast switching and storage in GaAs—AlxGa1-xAs heterojunction layersIEEE Electron Device Letters, 1982
- Disorder of an AlAs-GaAs superlattice by silicon implantationApplied Physics Letters, 1982
- Charge injection over triangular barriers in unipolar semiconductor structuresApplied Physics Letters, 1981
- Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGa1−xAs heterojunction layersApplied Physics Letters, 1981
- New rectifying semiconductor structure by molecular beam epitaxyApplied Physics Letters, 1980
- Planar-doped barriers in GaAs by molecular beam epitaxyElectronics Letters, 1980
- Negative differential resistance through real-space electron transferApplied Physics Letters, 1979
- A majority-carrier camel diodeApplied Physics Letters, 1979
- Transient and steady-state electron transport properties of GaAs and InPJournal of Applied Physics, 1977