Electron and hole drift mobility in amorphous silicon

Abstract

Electron and hole drift mobility have been measured in n‐ and p‐type amorphous Si Schottky‐barrier solar cells. At room temperature μ_dn= (2–5) ×10⁻² cm²/V sec and μ_dp= (5–6) ×10⁻⁴ cm²/V sec. Both mobilities are trap controlled with ΔE=0.19 eV for electrons and ΔE=0.35 eV for holes above 250 °K and ΔE=0.16 and 0.26 eV, respectively, below 250 °K. Majority‐carrier lifetimes are estimated to be 1 μsec for electrons and 25 μsec for holes.