Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy
- 1 March 2001
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 80 (1-3), 318-321
- https://doi.org/10.1016/s0921-5107(00)00656-5
Abstract
No abstract availableKeywords
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