Mechanical properties of the GaN thin films deposited on sapphire substrate
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 701-705
- https://doi.org/10.1016/s0022-0248(98)00262-0
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Polarized Reflectance Spectroscopy and Spectroscopic Ellipsometry Determination of the Optical Anisotropy of Gallium nitride on SapphireJapanese Journal of Applied Physics, 1997
- Surface deformation of the InGaN thin films deposited on a sapphire substrateThin Solid Films, 1997
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity FacetsJapanese Journal of Applied Physics, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Calculated elastic constants of wide band gap semiconductor thin films with a hexagonal crystal structure for stress problemsThin Solid Films, 1995
- Energy principle of the indentation-induced inelastic surface deformation and hardness of brittle materialsActa Metallurgica et Materialia, 1993
- Observation, analysis, and simulation of the hysteresis of silicon using ultra-micro-indentation with spherical indentersJournal of Materials Research, 1993
- P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1993
- The deformation behavior of ceramic crystals subjected to very low load (nano)indentationsJournal of Materials Research, 1992
- Refractive index of GaNPhysica Status Solidi (a), 1971