High-sensitivity piezoresistive cantilevers under 1000 Å thick
- 12 July 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (2), 289-291
- https://doi.org/10.1063/1.124350
Abstract
Ultrathin, high-sensitivity piezoresistive cantilevers were constructed using vapor-phase epitaxy to grow the conducting layer. A fourfold reduction in thickness was achieved over the thinnest implanted piezoresistive cantilevers, allowing improved force or displacement sensitivity and increased bandwidth. In cantilevers 890 Å thick, the dopant is well confined to the surface, and the sensitivity is 70% of the theoretical maximum. A cantilever fabricated for high force resolution has a minimum detectable force of 8.6 fN / Hz in air. Additionally, the 1/f noise is shown to follow the relation proposed by Hooge [Phys. Lett A 29, 139 (1969)], increasing in inverse proportion to the number of carriers.Keywords
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