Conduction and charge storage in Cr-thin SiO2-pSi structures
Open Access
- 1 January 1984
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 19 (4), 343-347
- https://doi.org/10.1051/rphysap:01984001904034300
Abstract
It is shown that Cr-SiO2-pSi devices with an SiO2 layer obtained by thermal oxidation in HCl/O2/N2 mixture have uniform and reproducible electrical properties at low injection level. Furthermore the breakdown phenomenon observed at high injection level has been associated with a positive charge storage within the insulatorKeywords
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