AN OPTOELECTRONIC COLD CATHODE USING AN AlxGa1−xAs HETEROJUNCTION STRUCTURE
- 1 May 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (9), 359-362
- https://doi.org/10.1063/1.1653225
Abstract
An efficient optoelectronic cold cathode has been made which includes a Si‐compensated AlxGa1−xAs electroluminescent diode covered with an absorbing p‐type GaAs layer having a negative electron affinity surface. This structure is designed to minimize current crowding in the vicinity of the Ohmic contact. An over‐all efficiency of 1.1×10−3 (current emitted into vacuum/diode current) has been achieved. This represents a factor of 102–103 improvement over previous p‐n junction or optically coupled cold cathode structures.Keywords
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