Extremely High 2DEG Concentration in Selectively Doped In0.53Ga0.47As/N-In0.52Al0.48As Heterostructures Grown by MBE
- 1 January 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (1A), L59
- https://doi.org/10.1143/jjap.26.l59
Abstract
Electron mobility and 2DEG concentration in MBE-grown, selectively doped In0.53Ga0.47As/N-In0.52Al0.48As heterostructures, lattice-matched to InP, were studied as a function of Si-doping concentration in N-In0.52Al0.48As. A 2DEG concentration of as high as 3.7×1012 cm-2 (µ=22,000cm2/Vs at 77 K) was achieved with a Si-doping concentration of 5×1018 cm-3 in N-In0.52Al0.48As. This N s value is the highest 2DEG concentration ever reported for selectively doped single-interface heterostructures, and is almost four times higher than that of conventional GaAs/N-AlGaAs heterostructures.Keywords
This publication has 10 references indexed in Scilit:
- Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0≦x≦1) HeterostructuresJapanese Journal of Applied Physics, 1986
- Selectively doped GaAs/N–AlGaAs heterostructures grown by molecular beam epitaxy for high electron mobility transistor IC applicationsJournal of Vacuum Science & Technology B, 1985
- High mobility electron gas in selectively doped n:AlGaAs/GaAs heterojunctionsApplied Physics Letters, 1984
- Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunctionJournal of Applied Physics, 1984
- Characterization of Ga0.47In0.53As and Al0.48In0.52As layers grown lattice matched on InP by molecular beam epitaxyJournal of Crystal Growth, 1983
- Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBEJapanese Journal of Applied Physics, 1983
- Silicon doping and impurity profiles in Ga0.47In0.53As and Al0.48In0.52As grown by molecular beam epitaxyJournal of Applied Physics, 1982
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Saturation velocity determination for In0.53Ga0.47As field-effect transistorsApplied Physics Letters, 1981
- Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON B InPJournal of Electronic Materials, 1980