Negative-U properties of the lattice vacancy in silicon
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3), 219-223
- https://doi.org/10.1016/0378-4363(83)90250-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Negative-Properties for Interstitial Boron in SiliconPhysical Review Letters, 1982
- Interstitial boron in silicon: A negative-systemPhysical Review B, 1980
- Theory of the silicon vacancy: An Anderson negative-systemPhysical Review B, 1980
- Simple parametrized model for Jahn-Teller systems: Vacancy in-type siliconPhysical Review B, 1980
- Negative-U Properties for Point Defects in SiliconPhysical Review Letters, 1980
- Silicon Vacancy: A Possible "Anderson Negative-" SystemPhysical Review Letters, 1979
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- Studies of defects introduced by electron irradiation at 4.2 °K in p-silicon by thermally stimulated capacitance techniqueJournal of Applied Physics, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975