Localized epitaxial growth of TaSi2 on (111) and (001)Si by rapid thermal annealing
- 1 August 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (3), 879-884
- https://doi.org/10.1063/1.339693
Abstract
Localized epitaxial TaSi2 was grown on (111) and (001)Si by rapid thermal annealing in Ar ambient. The best epitaxy was obtained in samples annealed at 1300 °C for 300 s. Three major modes and one dominant mode of TaSi2 epitaxy were found to grow on (111) and (001)Si, respectively. The roles of lattice match in the growth of epitaxial TaSi2 are explored. The effects of gas ambient on the growth of TaSi2 epitaxy are discussed.Keywords
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