Effective photoconductivity and plasma depth in optically quasi-CW controlled microwave switching devices
- 1 January 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings J Optoelectronics
- Vol. 135 (3), 251-254
- https://doi.org/10.1049/ip-j.1988.0048
Abstract
The paper presents an analysis of the carrier diffusion and surface recombination processes in gap-structure MIC devices at quasi-CW laser excitation. Quite simple analytical expressions are obtained for the effective laser-induced photoconductivity and the plasma penetration depth. The formulas have been confirmed by experiment, and allow application of the well-known lumped element analysis of the gap region (often used in the field of optoelectronic microwave switching) even under quasi-CW or pure-CW excitation condition.Keywords
This publication has 1 reference indexed in Scilit:
- Picosecond optoelectronic devices for millimeter wavesPublished by Optica Publishing Group ,1983