Effective photoconductivity and plasma depth in optically quasi-CW controlled microwave switching devices

Abstract

The paper presents an analysis of the carrier diffusion and surface recombination processes in gap-structure MIC devices at quasi-CW laser excitation. Quite simple analytical expressions are obtained for the effective laser-induced photoconductivity and the plasma penetration depth. The formulas have been confirmed by experiment, and allow application of the well-known lumped element analysis of the gap region (often used in the field of optoelectronic microwave switching) even under quasi-CW or pure-CW excitation condition.