Amorphous GaP produced by ion implantation
- 1 January 1976
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 37 (3), 305-313
- https://doi.org/10.1016/0022-3697(76)90092-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Optical and channeling studies of ion-bombarded GaPJournal of Applied Physics, 1974
- Electrical conductivity of disordered layers in GaAs crystal produced by ion implantationJournal of Applied Physics, 1974
- Electrical and optical properties of proton-bombarded gallium phosphideJournal of Applied Physics, 1973
- SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGEApplied Physics Letters, 1971
- Structural model for amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1971
- ION-IMPLANTATION INDUCED OPTICAL ABSORPTION EDGE SHIFTS IN GaPApplied Physics Letters, 1970
- Optical Properties of Amorphous Germanium FilmsPhysical Review B, 1970
- implantation of Bi into GaP. II. channeling studiesRadiation Effects, 1970