Criterion for multi-ion scattering in free carrier transport
- 30 March 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (9), 1987-1999
- https://doi.org/10.1088/0022-3719/15/9/019
Abstract
Partial-wave phase shift scattering cross sections are employed to evaluate expressions in a criterion, originally suggested by Rode and Knight (1971) for estimating the importance of multi-ion scattering in semiconductor free electron transport. When the screening length is much longer than the electron wavelength, multi-ion scattering is predicted to be less important than is implied by the calculations of Moore (1967) and of Arbuzov and Evdokimov (1979). Moreover, the results of those theories are shown to be misleading in that regime since they are based on the low-order termination of slowly converging expansions. Also discussed is a criterion for the importance of collision-broadening effects. These considerations appear to explain adequately why mobilities recently obtained from a single-site phase shift calculation agree well with experiment in some cases, but not in others.Keywords
This publication has 29 references indexed in Scilit:
- Theory of electrical conductivity of random binary alloys in the averaget-matrix approximationPhysical Review B, 1981
- On the static conductivity of a heavily doped semiconductorPhysica Status Solidi (b), 1979
- On the mobility of very pure semiconductors at very low temperaturesJournal of Physics and Chemistry of Solids, 1976
- On the charged-impurity-limited mobility for a very pure semiconductorSolid State Communications, 1975
- Proper-connected-diagram expansion of electrical conductivity for electron-impurity systemInternational Journal of Theoretical Physics, 1969
- Calculation of Ionized-Impurity Scattering Mobility of Electrons inPhysical Review B, 1968
- Singly-Ionized-Impurity Scattering in Degenerate MaterialPhysical Review B, 1968
- On the mobility of photoexcited carriers in silicon at low temperaturesProceedings of the Physical Society, 1965
- Ionized-Impurity Scattering Mobility of Electrons in SiliconPhysical Review B, 1959
- The Radiation Theories of Tomonaga, Schwinger, and FeynmanPhysical Review B, 1949