On the charged-impurity-limited mobility for a very pure semiconductor
- 15 October 1975
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 17 (8), 915-917
- https://doi.org/10.1016/0038-1098(75)90218-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Magnetic field dependence of cyclotron-resonance line broadeningPhysics Letters A, 1974
- Proper-connected-diagram expansion of electrical conductivity for electron-impurity systemInternational Journal of Theoretical Physics, 1969
- Cyclotron Resonance Line Broadening due to Carrier-Carrier Interaction in GermaniumJournal of the Physics Society Japan, 1964
- Analysis of Lattice and Ionized Impurity Scattering in-Type GermaniumPhysical Review B, 1962
- Statistical-Mechanical Theory of Irreversible Processes. I. General Theory and Simple Applications to Magnetic and Conduction ProblemsJournal of the Physics Society Japan, 1957
- Electrical Properties of Germanium Semiconductors at Low TemperaturesPhysical Review B, 1955
- Resistivity and Hall Effect of Germanium at Low TemperaturesPhysical Review B, 1954
- Electrical Properties of-Type GermaniumPhysical Review B, 1954
- The Resistivity and Hall Effect of Germanium at Low TemperaturesPhysical Review B, 1950
- Theory of Resistivity and Hall Effect at Very Low TemperaturesPhysical Review B, 1950