High-frequency and high-current studies of metal oxide varistors
- 1 July 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (7), 3116-3121
- https://doi.org/10.1063/1.323059
Abstract
High‐frequency, 106≲f≲2×109 Hz, impedance measurements on ZnO‐based ceramic varistors are described. Our studies indicate that the ZnO grain resistivity ρg is less than 1 Ω cm for GE‐MOVR varistors at room temperature. The high‐frequency measurements are compared with estimates of ρg from high‐current (J≳103 A/cm2) data and the difference observed is explained in terms of the varistor ceramic microstructure.Keywords
This publication has 8 references indexed in Scilit:
- Long-time polarization currents in metal-oxide varistorsJournal of Applied Physics, 1976
- ac properties of metal-oxide varistorsJournal of Applied Physics, 1976
- Tunneling of photoexcited carriers in metal oxide varistorsJournal of Applied Physics, 1975
- Microstructure and phase transformation in a highly non−Ohmic metal oxide varistor ceramicJournal of Applied Physics, 1975
- The physics of metal oxide varistorsJournal of Applied Physics, 1975
- Low temperature electrical properties of Zn-doped ZnOJournal of Solid State Chemistry, 1975
- Metal oxide varistor-A multijunction thin-film deviceApplied Physics Letters, 1974
- Nonohmic Properties of Zinc Oxide CeramicsJapanese Journal of Applied Physics, 1971