High-frequency and high-current studies of metal oxide varistors

Abstract
High‐frequency, 106f≲2×109 Hz, impedance measurements on ZnO‐based ceramic varistors are described. Our studies indicate that the ZnO grain resistivity ρg is less than 1 Ω cm for GE‐MOVR varistors at room temperature. The high‐frequency measurements are compared with estimates of ρg from high‐current (J≳103 A/cm2) data and the difference observed is explained in terms of the varistor ceramic microstructure.

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