Transport and noise in GaAs/AlGaAs heterojunction bipolar transistors. II. Noise and gain at low frequencies
- 1 June 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (6), 1020-1025
- https://doi.org/10.1109/16.24343
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Transport and noise in GaAs/AlGaAs heterojunction bipolar transistors. I. Transport and high current gainIEEE Transactions on Electron Devices, 1989
- Noise voltage and instability in GaAs devicesApplied Physics Letters, 1988
- Location of 1/f noise sources in BJT's—II. ExperimentIEEE Transactions on Electron Devices, 1987
- GaAs FET's with a flicker-noise corner below 1 MHzIEEE Transactions on Electron Devices, 1987
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982