Photoelectric spectroscopy of indium in silicon

Abstract

Photoelectric spectroscopy has been used to study $p_{\frac{3}{2}}$, $p_{\frac{1}{2}}$, and Breit-Wigner-Fano excited-state transitions of indium in silicon. The photoelectric spectra were compared to absorption spectra and measured as a function of temperature. All $p_{\frac{3}{2}}$ and $p_{\frac{1}{2}}$ absorption lines are resolved in the photoelectric spectra, with the exception of line $4B$. This is the first observation in photoelectric spectra of lines 3 through 10, $3p^{\prime }$, and $4p^{\prime }$. The temperature dependence of the spectra demonstrates that line intensities are governed by a photothermal ionization process; in particular, the activation energy of the line-4 intensity agrees with the theoretical binding energy of the excited state. Details previously observed in the Breit-Wigner-Fano spectra associated with $p_{\frac{3}{2}}$ lines 2-10 have also been observed for the first time in the absorption spectra.