Terms Linear inin the Band Structure of Zinc-Blende-Type Semiconductors
- 30 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (26), 2831-2833
- https://doi.org/10.1103/physrevlett.56.2831
Abstract
A calculation of the coefficient of the terms linear in in the valence bands of several III-V semiconductors is presented. On the basis of the systematics of these results it is concluded that these terms arise from coupling by the linear momentum and the spin-orbit operators to the uppermost levels of the core. A simple analytic expression to calculate for all III-V, II-VI, and I-VII compounds with zinc-blende structure is proposed. The results are in good agreement with the few experimental data available.
Keywords
This publication has 16 references indexed in Scilit:
- Electronic structure of GaAs under strainPhysical Review B, 1984
- Resonant Brillouin scattering in cadmium telluridePhysical Review B, 1984
- Precession of the Spin Polarization of Photoexcited Conduction Electrons in the Band-Bending Region of GaAs (110)Physical Review Letters, 1984
- Interference between Allowed and Forbidden Raman Scattering by Longitudinal-Optical Phonons in GaAsPhysical Review Letters, 1983
- Magnetopolaritons in ZnTeZeitschrift für Physik B Condensed Matter, 1983
- Exciton polaritons and hyper-Raman scattering in zinc-blende-type semiconductors: CuBr as an examplePhysical Review B, 1980
- Linear methods in band theoryPhysical Review B, 1975
- Densities of valence states of amorphous and crystalline III-V and II-VI semiconductorsPhysical Review B, 1974
- Inversion-Asymmetry and Warping-Induced Interband Magneto-Optical Transitions in InSbPhysical Review B, 1969
- Spin-Orbit Coupling Effects in Zinc Blende StructuresPhysical Review B, 1955