Precise measurement of the thermal expansion of silicon near 40 °C
- 1 April 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (4), 1683-1685
- https://doi.org/10.1063/1.322792
Abstract
We report absolute measurements of the thermal‐expansion coefficient of single‐crystal silicon having a precision of ±0.2%. Five thermal‐expansion values have been determined using 1.9 °C temperature measurement intervals within the temperature range 34–44 °C. Our value for the thermal expansion of silicon at 35.22±0.08 °C is 2.683±0.005×10−6 cm/cm °C, which agrees with previous measurements by others and represents an almost fivefold increase in accuracy.Keywords
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