Low pressure MOVPE of InP from trimethylindium and phosphine
- 1 March 1986
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (2), 111-116
- https://doi.org/10.1007/bf02649912
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Metalorganic chemical vapor deposition of III-V semiconductorsJournal of Applied Physics, 1985
- Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressuresApplied Physics Letters, 1985
- InGaAsP/InP double heterostructure lasers grown by atmospheric-pressure MOCVDElectronics Letters, 1985
- In situ vapor-etch for InP MOVPE using ethylene dibromideJournal of Crystal Growth, 1984
- High quality epitaxial indium phosphide and indium alloys grown using trimethylindium and phosphine in an atmospheric pressure reactorJournal of Crystal Growth, 1984
- Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressureJournal of Electronic Materials, 1984
- OMVPE growth of InP using TMInJournal of Crystal Growth, 1983
- Electron mobility and free-carrier absorption in InP; determination of the compensation ratioJournal of Applied Physics, 1980
- A New Method for Growing GaAs Epilayers by Low Pressure OrganometallicsJournal of the Electrochemical Society, 1979
- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970