Energy levels in electron irradiated n-type germanium
- 1 January 1979
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 40 (2), 19-22
- https://doi.org/10.1051/jphyslet:0197900400201900
Abstract
Deep levels introduced by room temperature 1 MeV electron irradiation in p+n photodiodes have been studied using deep level transient spectroscopy. Two electron traps and one hole trap have been observed after irradiation. A second hole trap is observed upon the annealing of the first hole trap. The energy levels associated with these traps, their cross-sections and their annealing behaviour have been determinedKeywords
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