Channel profile engineering for MOSFET's with 100 nm channel lengths
- 1 May 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (5), 870-875
- https://doi.org/10.1109/16.381982
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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